Semiconductor Electronics

Higher education teachers: Smole Franc
Collaborators: Glažar Boštjan, Lipovšek Benjamin
Credits: 7
Semester: summer
Subject code: 64118



Subject description

Prerequisits:

  • enrolment in 2nd year of university studies
  • conducted laboratory assignments present a condition for undertaking the final exam

Content (Syllabus outline):

Classifications of semiconductors. Carrier transport phenomena. Carrier generation and recombination. The pn junction diode: ideal and nonideal current-voltage relationship, small-signal model of the pn junction, junction breakdown, diode transients. Special diode types: the tunnel diode, the Schottky barrier diode, heterojunction diode. Diode circuits: rectifier, limiting and clamping circuits. The bipolar transistor: current-voltage relationship, the modes of operation, amplification with bipolar transistors, equivalent circuit models, frequency limitations, large-signal switching, basic single-stage amplifier configurations, basic logic inverter. The JFET and the MOSFET, current-voltage relationship, small-signal equivalent circuit, basic configurations of single-stage amplifiers, the CMOS digital logic inverter. Semiconductor power devices: pnpn diode, diac, thyristor, triac, insulated-gate bipolar transistor (IGBT). Optical devices: optical absorption, light emitting diodes, laser diodes, photodetectors: photoconductor, photodiode, pin photodiode, avalanche photodiode, phototransistor, solar cells. Nanoelectronics and nanotechnology: basic definitions, trends in the field of nanoelectronics, nanoconductors, transport properties of semiconductor nanostructures, nanodevices.

Objectives and competences:

  • To comprehend structures, basic principles of operation and properties of semiconductor devices and present the main purposes of applications on examples of basic configurations.
  • Knowledge of semiconductor devices is important for the understanding of the analog and digital electronics, power electronics, optoelectronics, photonics and emerging nanoelectronics.

Intended learning outcomes:

  • Student will comprehend the structure and functioning of semiconductor devices, basic configurations of elements and fundamental purposes of application.

Learning and teaching methods:

  • lectures, auditory practice, laboratory assignments





Study materials

  • Franc Smole, Polprevodniška elektronika, Založba FE in FRI, Ljubljana, 2013.
  • Smole F., Topič M., Elementi polprevodniške elektronike, Založba FE in FRI, Ljubljana, 2014.
  • Streetman B. G., Solid State Electronic Devices, Prentice-Hall International, Englewood
  • Cliffs, 1999.
  • Donald A. Neamen, Semiconductor Physics and Devices, University of New Mexico,
  • McGraw-Hill, 2011.
  • S. M. Sze, Semiconductor Devices, John Wiley & Sons, Inc., 2006.
  • S. O. Kasap, Optoelectronics and Photonics, Prentice Hall, Inc., 2013.
  • William A. Goddard, Donald W. Brenner, Sergey Edward Lyshevski, Gerald J. Iafrate,
  • Nanoscience, Engineering, and Technology, CRC Press LLC, 2012.
  • George W. Hanson, Fundamentals of Nanoelectronics, Pearson Prentice Hall, 2008.



Study in which the course is carried out

  • 2 year - 1st cycle - Electrical Engineering