Semiconductor Devices

Subject description

Semiconductors. Semiconductor materials and properties. Undoped and doped semiconductors.

pn junction and diodes. Analysis of electrostatic conditions, current-to-voltage characteristics of ideal and real pn-junction, regimes of operation, small-signal analysis, large-signal analysis, frequency dependence. Breakdown diodes and power diodes.

Bipolar transistors. Analysis of electrostatic conditions in pnp and npn transistors, current-to-voltage characteristics of ideal and real bipolar transistors, regimes of operation, small-signal analysis, large-signal analysis, frequency dependence. Properties of different transistor orientations.

Unipolar transistors. FETs with pn junction and MOSFETs. Analysis of electrostatic conditions, current-to-voltage characteristics of ideal and real FETs, regimes of operation, small-signal analysis, large-signal analysis, frequency dependence. Properties of different transistor orientations.

Power electronic devices. Structures and principle of operation for pnpn diode, diac, tiristor, triac, IGBT.

Optoelectronic devices. Light emitting diodes, laser diodes, optocouplers, photodetectors, solar cells and photovoltaic modules.

The subject is taught in programs

Objectives and competences

To acquire fundamental and contemporary knowledge about electron devices, starting with semiconductor properties. To learn about the versatile importance of pn-junction(s) in semiconductor devices in the fields of electronics, optoelectronics and photonics. To transfer theoretical knowledge of semiconductors into operational principles of diodes, bipolar and unipolar transistors and other power electronic or optoelectronic devices under steady state or dynamic conditions.

Teaching and learning methods

lectures, laboratory assignments, wotk at home/homeworks

Expected study results

After successful completion of the course, students should be able to:

– explain the energy distribution and concentrations of free charges in intrinsic or doped semiconductors,

– describe the continuity of carrier concentrations and electrical currents in a semiconductor,

– explain physical phenomena in a pn-junction in thermal equilibrium and under external voltage,

– define the current-voltage and frequency constraints of diodes,

– explain the properties of a bipolar transistor in the various regimes of operation,

– evaluate the constraints in selecting a bipolar transistor for various applications,

– explain the operation and benefits of unipolar transistors,

– explain the operation and applications of power semiconductor devices,

– describe basic physical phenomena in optoelectronic devices.

Basic sources and literature

D. A. Neamen, Semiconductor Physics and Devices, University of New Mexico, McGraw-Hill, 2011.

F. Smole, M. Topič, Elementi polprevodniške elektronike, Založba FE in FRI, Ljubljana, 2014.

F. Smole, Polprevodniška elektronika, Založba FE in FRI, Ljubljana, 2013.

S. M. Sze, Semiconductor Devices, John Wiley & Sons, Inc., 2006.

S. O. Kasap, Optoelectronics and Photonics, Prentice Hall, Inc., 2013.