Nanoelectronics

Course description

Definition of nanoelectronics and nanotechnology. An outlook of nanoscience. Review processes for manufacturing nanostructures. The top-down approach. The bottom-up approach. Device scaling and nonideal effects. Self-assembly. Molecular nanoelectronics. Switches and complex molecular devices. Nanoelectronic circuit architectures. Computer architectures based on molecular electronics. Electromagnetic, optical and electronic properties of nanostructures.

Transport properties of semiconductor nanostructures. Single-electron transistor. Nanomagnetics and spintronics. Polymer electronics. Organic active and passive devices and circuits. Nanophotonics. Quantum dots, quantum wells and quantum wires. Carbon nanotubes and nanowires. Structure and properties of carbon nanotubes. Electronic, optoelectronic, magnetic, chemical and thermoelectrical properties of carbon nanotubes. Electronic devices and circuits based on nanotubes. Chemical and biological nanosensors. Nano- and micromachines. Modeling and simulation of quantum- and nanosystems.

Course is carried out on study programme

2nd Cycle Postgraduate Study Programme in Electrical Engineering

Objectives and competences

The aim of the course is to upgrade definitions and concepts and to introduce students with research trends in the field of nanoelectronics and to survey characteristics of already investigated structures, devices and systems.

Learning and teaching methods

The lectures provide a theoretical background on particular subjects, presentation of practical examples and practical work is being performed in the laboratory environment.

Intended learning outcomes

After successful completion of the course, students should be able to:

– define nanoelectronics as a new developing area of electronics,

– clarify lithography as a top-down approach and the limitations it presents in the further miniaturization of electron devices,

– use the quantum mechanics postulates to construct models of quantum wells, quantum wires and quantum dots,

– describe the effects of higher orders in the MOS transistor,

– describe the electronic and optical properties of carbon nanotubes and the possibility of producing semiconductor elements based on carbon nanotubes,

– explain the Coulomb blockade and the operation of a single-electron transistor,

– explain transport of spin and spintronic devices (spin valve, spin transistor, magnetic storage),

– describe the cubit, the quantum logic gate, and the basics of quantum computers.

Reference nosilca

SEIF, Johannes Peter, DESCOEUDRES, Antoine, FILIPIČ, Miha, SMOLE, Franc, TOPIČ, Marko, HOLMAN, Zachary Charles, DE WOLF, Stefaan, BALLIF, Christophe. Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells. Journal of applied physics, 2014, vol. 115, no. 2, str. 1-8.

FILIPIČ, Miha, HOLMAN, Zachary, SMOLE, Franc, DE WOLF, Stefaan, BALLIF, Christophe, TOPIČ, Marko. Analysis of lateral transport through the inversion layer in amorphous silicon/crystalline silicon heterojunction solar cells. Journal of applied physics, 2013, vol. 114, no. 7, str. 1-7.

HOLMAN, Zachary, FILIPIČ, Miha, LIPOVŠEK, Benjamin, DE WOLF, Stefaan, SMOLE, Franc, TOPIČ, Marko, BALLIF, Christophe. Parasitic absorption in the rear reflector of a silicon solar cell: simulation and measurement of the sub-bandgap reflectance for common dielectric/metal reflectors. Solar energy materials and solar cells, [Print ed.], Jan. 2014, vol. 120, part A, str. 426-430.

FILIPIČ, Miha, BERGINC, Marko, SMOLE, Franc, TOPIČ, Marko. Analysis of electron recombination in dye-sensitized solar cell. Current applied physics, Jan. 2012, vol. 12, no. 1, str. 238-246.

NERAT, Marko, SMOLE, Franc, TOPIČ, Marko. A simulation study of the effect of the diverse valence-band offset and the electronic activity at the grain boundaries on the performance of polycrystalline Cu(In,Ga)Se2 solar cells. Thin Solid Films, [Print ed.], 2011, vol. 519, no. 21, str. 7497-7502.

Study materials

  1. William A. Goddard, Donald W. Brenner, Sergey Edward Lyshevski, Gerald J. Iafrate, Nanoscience, Engineering, and Technology, CRC Press LLC, 2012.
  2. Paul Harrison, Quantum Wells, Wires and Dots, Theoretical and Computational Physics of Semiconductor Nanostructures, John Wiley & Sons, Ltd, 2009.
  3. Edward L. Wolf, Nanophysics and Nanotechnology, Wiley-VCH Verlag GmbH & Co. KGaA, 2008.
  4. M. Meyyappan, Carbon Nanotubes, Science and Applications, CRC Press LLC, 2005.
  5. George W. Hanson, Fundamentals of  Nanoelectronics, Pearson Prentice Hall, 2008.
  6. F. Smole, Nanoelektronika, Založba FE in FRI, 2014, 355 str., ISBN 978-961-243-250-8.

Bodi na tekočem

Univerza v Ljubljani, Fakulteta za elektrotehniko, Tržaška cesta 25, 1000 Ljubljana

E:  dekanat@fe.uni-lj.si T:  01 4768 411